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RFD14N05L, RFD14N05LSM
Typical Performance Curves
Unless Otherwise Specified (Continued)
2.0
1.5
1.0
0.5
0
V GS = V DS , I D = 250 μ A
2.0
1.5
1.0
0.5
0
I D = 250 μ A
-80
-40
0 40 80 120 160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
800
50
5
C ISS
40
V DD = BV DSS
V DD = BV DSS
4
600
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
30
3
400
C RSS = C GD
C OSS ≈ C DS + C GD
C OSS
20
0.75 BV DSS
0.50 BV DSS
0.25 BV DSS
2
200
C RSS
10
0
R L = 3.57 ?
I G(REF) = 0.4mA
V GS = 5V
1
0
I G ( REF )
G ( ACT )
I G ( REF )
G ( ACT )
0
0
5 10 15 20
V DS , DRAIN TO SOURCE VOLTAGE (V)
25
20 -------------------------
I
t, TIME ( μ s)
80 -------------------------
I
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260,
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 15. TRANSCONDUCTANCE vs DRAIN CURRENT
Test Circuits and Waveforms
V DS
BV DSS
L
t P
V DS
VARY t P TO OBTAIN
REQUIRED PEAK I AS
R G
+
V DD
I AS
V DD
V GS
DUT
-
0V
t P
I AS
0.01 ?
0
t AV
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
?2004 Fairchild Semiconductor Corporation
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
RFD14N05L, RFD14N05LSM Rev. C0
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